Dow Corning Introduces SiC Wafer Grading Structure for the Power Electronics Industry

Dow Corning, a global leader in silicon and wide-bandgap semiconductor technology, today established a higher industry standard for silicon carbide (SiC) crystal quality by introducing a product grading structure that specifies ground-breaking new tolerances on killer device defects.

This groundbreaking new grading structure aims to optimize the range, performance and cost of next-generation power electronic device designs fabricated on Dow Corning's high-quality Prime Grade portfolio of 100-mm SiC wafers, which the company now offers in three new tiers of manufacturing-quality substrates labeled Prime Standard, Prime Select and Prime Ultra.

"As a global technology leader in advanced silicon carbide materials, Dow Corning recognizes that wide-bandgap semiconductor technology must deliver much more than high quality alone - it must deliver exceptional overall value," said Gregg Zank, chief technology officer, Dow Corning. "Another Dow Corning industry first, our new SiC wafer grading structure meets this need head on. It is the direct result of our close collaboration with the globe's leading power electronics device manufacturers, and aims to help give them what they need to quickly achieve their evolving design goals at an optimal price point."

"The precise tolerances defining each grade's crystal quality coupled with Dow Corning's highly competitive pricing structure reflect the company's deep familiarity with the competitive demands of the silicon semiconductors market," said Tang Yong Ang, vice president, Compound Semiconductor Solutions, Dow Corning. 

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