C60 Thin Film Heat Treatment Preparation of Silicon Carbide

In recent years, silicon carbide is widely used in microelectronics devices and micro-electromechanical devices because of its superior physical properties such as high heat conductivity, chemical inertness, hardness and wear resistance.

Many researchers make silicon carbide thin film on silicon substrate or silicon carbide by CVD method and molecular beam growth process. The technologies require 1000 ℃ to 1500 ℃ high temperature processing conditions, which limits the preparation of silicon carbide thin film on manufacturing equipment under high temperature.

In order to obtain better depth resolution and study the formation of silicon carbide on the boundary surface. They make a second depth resolution mass spectrometry analysis on samples with the help of Ar plasma INA3 equipment.

In order to optimize the depth resolution and sensitivity of the depth profiling, the sputtering power is set to 700 eV. Using the Dektak feeler pin profilometer to measure the depth of the groove mark on samples, is to get the sputtering rate of silicon carbide. In the process of heat treatment, C60 thin films reacts with silicon, and is consumed quickly to produce silicon carbide.

According to the spectral line shapes of carbon and silicon from graphite carbon, silicon metal to the evolution of the typical carbide, we test the silicon carbide tour by using AES.

The results show that the heat treatment time of silicon carbide under 800 ℃ is more than 100 minutes, and then it begins to form. And under 900 ℃, it only needs 25 minutes, and after more than 25 minutes under 900 ℃, we can get the ideal ratio of silicon carbide.

This proves that under the condition of 900 ℃ heat treatment, we can make use of the pre-deposition of C60 thin films on silicon substrate to prepare homogeneous silicon carbide thin film.